Effect of carrier screening on ZnO-based resistive switching memory devices
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Effect of carrier screening on ZnO-based resistive switching memory devices
Authors
Keywords
resistive switch, carrier screening effect, carrier concentration, potential gradient, annealing
Journal
Nano Research
Volume 10, Issue 1, Pages 77-86
Publisher
Springer Nature
Online
2016-10-20
DOI
10.1007/s12274-016-1267-7
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor
- (2016) Yihui Sun et al. Nano Research
- High On–Off Ratio Improvement of ZnO-Based Forming-Free Memristor by Surface Hydrogen Annealing
- (2015) Yihui Sun et al. ACS Applied Materials & Interfaces
- Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory
- (2015) Writam Banerjee et al. IEEE ELECTRON DEVICE LETTERS
- Influence of the carrier concentration on the piezotronic effect in a ZnO/Au Schottky junction
- (2015) Shengnan Lu et al. Nanoscale
- Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
- (2015) Anja Wedig et al. Nature Nanotechnology
- Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
- (2014) Wei Hu et al. ACS Applied Materials & Interfaces
- A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions
- (2014) Junjie Qi et al. Nanoscale
- Layered memristive and memcapacitive switches for printable electronics
- (2014) Alexander A. Bessonov et al. NATURE MATERIALS
- Thermoelectric Seebeck effect in oxide-based resistive switching memory
- (2014) Ming Wang et al. Nature Communications
- Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States
- (2013) Shih-Ming Lin et al. ACS Applied Materials & Interfaces
- Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate
- (2013) Chi-Hsin Huang et al. ACS Applied Materials & Interfaces
- Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
- (2013) Jian Zhang et al. APPLIED SURFACE SCIENCE
- A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown
- (2013) Shibing Long et al. IEEE ELECTRON DEVICE LETTERS
- Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
- (2013) Shibing Long et al. Scientific Reports
- ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
- (2012) Chi-Hsin Huang et al. ACS Nano
- Band Structure Engineering at Heterojunction Interfaces via the Piezotronic Effect
- (2012) Jian Shi et al. ADVANCED MATERIALS
- Piezoelectric-Polarization-Enhanced Photovoltaic Performance in Depleted-Heterojunction Quantum-Dot Solar Cells
- (2012) Jian Shi et al. ADVANCED MATERIALS
- Engineering of efficiency limiting free carriers and an interfacial energy barrier for an enhancing piezoelectric generation
- (2012) Jung Inn Sohn et al. Energy & Environmental Science
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
- (2012) Jun Yao et al. Nature Communications
- Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures
- (2011) Byungjin Cho et al. ADVANCED FUNCTIONAL MATERIALS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls
- (2010) Haibo Zeng et al. ADVANCED FUNCTIONAL MATERIALS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- High-Density Crossbar Arrays Based on a Si Memristive System
- (2009) Sung Hyun Jo et al. NANO LETTERS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Memory Metamaterials
- (2009) T. Driscoll et al. SCIENCE
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started