Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

Resistive switching materials for information processing

(2020) Zhongrui Wang et al.   Nature Reviews Materials

Memristive crossbar arrays for brain-inspired computing

(2019) Qiangfei Xia et al.   NATURE MATERIALS

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

(2019) Renjing Xu et al.   NANO LETTERS

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

(2019) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

(2019) Xuewei Feng et al.   Advanced Electronic Materials

Deeply Exploring Anisotropic Evolution toward Large-Scale Growth of Monolayer ReS2

(2019) Qinming He et al.   ACS Applied Materials & Interfaces

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

(2019) Jakub Jadwiszczak et al.   ACS Nano

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures

(2018) Woong Huh et al.   ADVANCED MATERIALS

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

(2018) Shinhyun Choi et al.   NATURE MATERIALS

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation

(2018) Da Li et al.   ACS Nano

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

(2018) Xiaojian Zhu et al.   NATURE MATERIALS

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

(2018) Shuang Pi et al.   Nature Nanotechnology

Ion Beam Defect Engineering on ReS2 /Si Photocathode with Significantly Enhanced Hydrogen Evolution Reaction

(2018) Wentian Huang et al.   Advanced Materials Interfaces

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

(2017) Kibum Kang et al.   NATURE

Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy

(2017) Seung Hyun Song et al.   Nature Communications

Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2Atomic Layers on Mica Substrate

(2016) Fangfang Cui et al.   ADVANCED MATERIALS

High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

(2016) Jaewoo Shim et al.   ADVANCED MATERIALS

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

(2015) Yung-Chang Lin et al.   ACS Nano

Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity

(2015) Sungho Kim et al.   NANO LETTERS

In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

(2015) Daniel A. Chenet et al.   NANO LETTERS

Back-to-back connected asymmetric Schottky diodes with series resistance as a single diode

(2015) Jozef Osvald   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Layered memristive and memcapacitive switches for printable electronics

(2014) Alexander A. Bessonov et al.   NATURE MATERIALS

Formation and stability of point defects in monolayer rhenium disulfide

(2014) S. Horzum et al.   PHYSICAL REVIEW B

Stability and electronic structures of native defects in single-layerMoS2

(2014) Ji-Young Noh et al.   PHYSICAL REVIEW B

Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

(2014) Sefaattin Tongay et al.   Nature Communications

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Face-to-face transfer of wafer-scale graphene films

(2013) Libo Gao et al.   NATURE

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistive switching behaviors of ZnO nanorod layers

(2010)   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Scanning Tunneling Microscopy Characterization of the Electrical Properties of Wrinkles in Exfoliated Graphene Monolayers

(2009) Ke Xu et al.   NANO LETTERS