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High Current Density in Monolayer MoS2 Doped by AlOx

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Promises and prospects of two-dimensional transistors

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Benchmarking monolayer MoS2 and WS2 field-effect transistors

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Ultralow contact resistance between semimetal and monolayer semiconductors

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Ultrafast Growth of Large Single Crystals of Monolayer WS2 and WSe2

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Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

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(2020) Jia Li et al.   NATURE

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(2019) Yan Wang et al.   NATURE

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(2019) Ming-Yang Li et al.   NATURE

Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

(2019) Xiang Zhang et al.   ACS Applied Materials & Interfaces

Disorder in van der Waals heterostructures of 2D materials

(2019) Daniel Rhodes et al.   NATURE MATERIALS

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe 2 on Inert Amorphous Dielectrics

(2019) Qingyuan He et al.   ADVANCED MATERIALS

Van der Waals negative capacitance transistors

(2019) Xiaowei Wang et al.   Nature Communications

High-speed black phosphorus field-effect transistors approaching ballistic limit

(2019) Xuefei Li et al.   Science Advances

Graphene and two-dimensional materials for silicon technology

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Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

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Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

(2018) Shaofan Yuan et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

(2018) Quoc An Vu et al.   2D Materials

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

(2018) Yu-Ting Huang et al.   ACS Applied Materials & Interfaces

Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

(2018) Mianzeng Zhong et al.   ADVANCED FUNCTIONAL MATERIALS

Two-dimensional transistors beyond graphene and TMDCs

(2018) Yuan Liu et al.   CHEMICAL SOCIETY REVIEWS

Mobility Deception in Nanoscale Transistors: An Untold Contact Story

(2018) Joseph R. Nasr et al.   ADVANCED MATERIALS

Sub-5 nm Metal Nanogaps: Physical Properties, Fabrication Methods, and Device Applications

(2018) Yang Yang et al.   Small

Highly-anisotropic optical and electrical properties in layered SnSe

(2017) Shengxue Yang et al.   Nano Research

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

(2017) Chenguang Qiu et al.   SCIENCE

Strain-engineered growth of two-dimensional materials

(2017) Geun Ho Ahn et al.   Nature Communications

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

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High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs

(2016) Yuda Zhao et al.   ADVANCED MATERIALS

High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

(2016) Jaewoo Shim et al.   ADVANCED MATERIALS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors

(2016) Yuan Liu et al.   NANO LETTERS

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2devices

(2016) Kirby K H Smithe et al.   2D Materials

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

(2015) M Waqas Iqbal et al.   Scientific Reports

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

(2014) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

(2014) Hailong Zhou et al.   NANO LETTERS

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

(2014) Shengxue Yang et al.   Nanoscale

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

(2013) Meeghage Madusanka Perera et al.   ACS Nano

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications

(2013) Jing-Kai Huang et al.   ACS Nano

Control of Radiation Damage in MoS2 by Graphene Encapsulation

(2013) Recep Zan et al.   ACS Nano

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Tunneling Transistors Based on Graphene and 2-D Crystals

(2013) Debdeep Jena   PROCEEDINGS OF THE IEEE

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Assessment of Electron Mobility in Ultrathin-Body InGaAs-on-Insulator MOSFETs Using Physics-Based Modeling

(2012) Mirko Poljak et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation

(2009) Saurabh Mookerjea et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES