Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 13, Pages 12777-12785Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b00306
Keywords
two-dimensional materials; chemical vapor deposition; MoTe2; in-plane heterostructure; metal semiconductor junction; contact resistance
Funding
- Air Force Office of Scientific Research (AFOSR) [FA9550-14-1-0268, FA9550-18-1-0072]
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - DARPA
- Welch Foundation [C-1716]
- Office of Naval Research [N00014-19-1-2191]
- Ken Kennedy Institute for Information Technology
- National Science Foundation Graduate Research Fellowship [0940902]
- Air Force Office of Scientific Research Grant [AFOSR-YIP FA9550-17-1-0202]
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Metal semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T' MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T' junction than in Ti/ 2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.
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