Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Disorder-Induced Ordering in Gallium Oxide Polymorphs

(2022) Alexander Azarov et al.   PHYSICAL REVIEW LETTERS

Ion implantation in β-Ga2O3: Physics and technology

(2021) Alena Nikolskaya et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

(2021) Alexander Azarov et al.   APPLIED PHYSICS LETTERS

Ion-beam modification of metastable gallium oxide polymorphs

(2021) David Tetelbaum et al.   MATERIALS LETTERS

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

(2020) Jiaye Zhang et al.   APL Materials

Structural transition and recovery of Ge implanted β-Ga2O3

(2020) Elaf A. Anber et al.   APPLIED PHYSICS LETTERS

Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

(2019) A. I. Pechnikov et al.   SEMICONDUCTORS

Materials issues and devices of α- and β-Ga2O3

(2019) Elaheh Ahmadi et al.   JOURNAL OF APPLIED PHYSICS

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

(2019) A. I. Titov et al.   SEMICONDUCTORS

The formation of radiation damage in GaN during successive bombardment by light ions of various energies

(2019) A.I. Titov et al.   VACUUM

Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga 2 O 3 layers

(2018) D.A. Zatsepin et al.   SUPERLATTICES AND MICROSTRUCTURES

Electrical Properties of Bulk, Non-Polar, Semi-Insulating M-GaN Grown by the Ammonothermal Method

(2018) A. Y. Polyakov et al.   ECS Journal of Solid State Science and Technology

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

(2018) S. J. Pearton et al.   JOURNAL OF APPLIED PHYSICS

Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

(2016) W.V. Lundin et al.   JOURNAL OF CRYSTAL GROWTH

High-level damage saturation below amorphisation in ion implanted β-Ga2O3

(2016) Elke Wendler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Review—Ionizing Radiation Damage Effects on GaN Devices

(2015) S. J. Pearton et al.   ECS Journal of Solid State Science and Technology

On the mechanism of damage buildup in gallium nitride

(2013) A. Turos   Radiation Effects and Defects in Solids

Model for radiation damage buildup in GaN

(2011) A.I. Titov et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Effect of pre-existing disorder on surface amorphization in GaN

(2010) A. Yu. Azarov et al.   JOURNAL OF APPLIED PHYSICS

Energy spike effects in ion-bombarded GaN

(2009) S O Kucheyev et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS