Electrical Properties of Bulk, Non-Polar, Semi-Insulating M-GaN Grown by the Ammonothermal Method

Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

(2017) In-Hwan Lee et al.   JOURNAL OF APPLIED PHYSICS

Study of neutron irradiated structures of ammonothermal GaN

(2017) E Gaubas et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

(2017) Robert Kucharski et al.   Crystals

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

(2016) In-Hwan Lee et al.   Applied Physics Express

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

(2016) M Bockowski et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Deep traps in GaN-based structures as affecting the performance of GaN devices

(2015) Alexander Y. Polyakov et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

(2014) In-Hwan Lee et al.   JOURNAL OF APPLIED PHYSICS

Time-resolved photoluminescence from defects in n-type GaN

(2014) M. A. Reshchikov   JOURNAL OF APPLIED PHYSICS

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

(2014) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

First-principles theory of nonradiative carrier capture via multiphonon emission

(2014) Audrius Alkauskas et al.   PHYSICAL REVIEW B

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

(2013) D. Gogova et al.   JOURNAL OF APPLIED PHYSICS

Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

(2011) A. Y. Polyakov et al.   APPLIED PHYSICS LETTERS

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

(2011) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Recent achievements in AMMONO-bulk method

(2010) R. Dwiliński et al.   JOURNAL OF CRYSTAL GROWTH

Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors

(2009) Tetsuya Fujiwara et al.   Applied Physics Express

Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films

(2009) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Deep centers in bulk AlN and their relation to low-angle dislocation boundaries

(2009) A.Y. Polyakov et al.   PHYSICA B-CONDENSED MATTER

GaN Substrates for III-Nitride Devices

(2009) Tanya Paskova et al.   PROCEEDINGS OF THE IEEE