Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

Structural transition and recovery of Ge implanted β-Ga2O3

(2020) Elaf A. Anber et al.   APPLIED PHYSICS LETTERS

Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

(2019) Alexander Azarov et al.   JOURNAL OF APPLIED PHYSICS

Engineering strain and conductivity of MoO3 by ion implantation

(2019) Daniela R. Pereira et al.   ACTA MATERIALIA

Iron and intrinsic deep level states in Ga2O3

(2018) M. E. Ingebrigtsen et al.   APPLIED PHYSICS LETTERS

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Acceptor doping of β-Ga2O3 by Mg and N ion implantations

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Oxygen out-diffusion and compositional changes in zinc oxide during ytterbium ions bombardment

(2018) Paweł Piotr Michałowski et al.   NANOTECHNOLOGY

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

(2018) M. E. Ingebrigtsen et al.   APL Materials

Dynamic annealing in Ge studied by pulsed ion beams

(2017) J. B. Wallace et al.   Scientific Reports

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

SRIM – The stopping and range of ions in matter (2010)

(2010) James F. Ziegler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS