Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

(2018) Yao Yao et al.   Materials Research Letters

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®

(2016) Masaya Oda et al.   Applied Physics Express

Surface termination structure of α-Ga2O3 film grown by mist chemical vapor deposition

(2016) Daiki Tamba et al.   APPLIED PHYSICS LETTERS

Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy

(2016) Zhengwei Chen et al.   APPLIED PHYSICS LETTERS

Conductivity control of Sn-doped α-Ga2O3thin films grown on sapphire substrates

(2016) Kazuaki Akaiwa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates

(2016) V. I. Nikolaev et al.   SEMICONDUCTORS

Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates

(2015) Yuichi Oshima et al.   Applied Physics Express

Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)

(2014) Robert Schewski et al.   Applied Physics Express

Creation of Nanoparticle–Nanotube Conjugates for Life-Science Application Using Gas–Liquid Interfacial Plasmas

(2013) Toshiro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

(2008) Daisuke Shinohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS