Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM

Title
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
Authors
Keywords
SRAM, FinFET, Ultra-low-power, Stability, Sub-threshold, Process variations
Journal
MICROELECTRONICS JOURNAL
Volume 123, Issue -, Pages 105427
Publisher
Elsevier BV
Online
2022-03-19
DOI
10.1016/j.mejo.2022.105427

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