P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation

Title
P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation
Authors
Keywords
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Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 46, Issue 3, Pages 695-704
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-02-01
DOI
10.1109/jssc.2010.2102571

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