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Title
FinFET based SRAMs in Sub-10nm domain
Authors
Keywords
Static random access memory (SRAM), Underlapped FinFET, Design technology optimized FinFET, Static noise margin, N-curve, Monte Carlo, Stability, Reliability, Robustness
Journal
MICROELECTRONICS JOURNAL
Volume 114, Issue -, Pages 105116
Publisher
Elsevier BV
Online
2021-05-25
DOI
10.1016/j.mejo.2021.105116
References
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