A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications

Single bit line accessed high‐performance ultra‐low voltage operating 7T static random access memory cell with improved read stability

(2021) Bhawna Rawat et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications

(2021) Erfan Abbasian et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications

(2021) Erfan Abbasian et al.   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design

(2021) Erfan Abbasian et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology

(2021) Farzaneh Izadinasab et al.   MICROELECTRONICS JOURNAL

A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications

(2021) Mehrzad Karamimanesh et al.   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology

(2021) Mehrzad Karamimanesh et al.   MICROELECTRONICS JOURNAL

Single Bit-line 11T SRAM Cell for Low Power and Improved Stability

(2020) Rohit Lorenzo et al.   IET Computers and Digital Techniques

One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation

(2020) Keonhee Cho et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

A variation-aware design for storage cells using Schottky-barrier-type GNRFETs

(2020) Erfan Abbasian et al.   Journal of Computational Electronics

Characterization of Half-Select Free Write Assist 9T SRAM Cell

(2019) Soumitra Pal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

(2019) Yajuan He et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Low Leakage Fully Half-Select-Free Robust SRAM Cells with BTI Reliability Analysis

(2018) Sayeed Ahmad et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ultra-Low Power High Stability 8T SRAM for Application in Object Tracking System

(2018) Pooran Singh et al.   IEEE Access

A write-improved low-power 12T SRAM cell for wearable wireless sensor nodes

(2018) Vishal Sharma et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Low-Power Near-Threshold 10T SRAM Bit Cells With Enhanced Data-Independent Read Port Leakage for Array Augmentation in 32-nm CMOS

(2018) Shourya Gupta et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Half-Select Free and Bit-Line Sharing 9T SRAM for Reliable Supply Voltage Scaling

(2017) Kyungho Shin et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory

(2017) Sayeed Ahmad et al.   MICROELECTRONICS JOURNAL

9-T SRAM Cell for Reliable Ultralow-Power Applications and Solving Multibit Soft-Error Issue

(2016) Soumitra Pal et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process–voltage–temperature variations

(2016) C.B. Kushwah et al.   MICROELECTRONICS JOURNAL

Low power and robust memory circuits with asymmetrical ground gating

(2016) Hailong Jiao et al.   MICROELECTRONICS JOURNAL

Securing While Sampling in Wireless Body Area Networks With Application to Electrocardiography

(2016) Ruslan Dautov et al.   IEEE Journal of Biomedical and Health Informatics

A Wearable Healthcare System With a 13.7 $\mu$ A Noise Tolerant ECG Processor

(2015) Shintaro Izumi et al.   IEEE Transactions on Biomedical Circuits and Systems

An 8T Low-Voltage and Low-Leakage Half-Selection Disturb-Free SRAM Using Bulk-CMOS and FinFETs

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-ended, robust 8T SRAM cell for low-voltage operation

(2013) Liang Wen et al.   MICROELECTRONICS JOURNAL

Ultra Low-Energy SRAM Design for Smart Ubiquitous Sensors

(2012) Vibhu Sharma et al.   IEEE MICRO

Ultralow-Voltage Process-Variation-Tolerant Schmitt-Trigger-Based SRAM Design

(2011) Jaydeep P. Kulkarni et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

A 32 kb 10T Sub-Threshold SRAM Array With Bit-Interleaving and Differential Read Scheme in 90 nm CMOS

(2009) Ik Joon Chang et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS