A robust and low-power near-threshold SRAM in 10-nm FinFET technology

An energy and area efficient 4:2 compressor based on FinFETs

(2018) Armineh Arasteh et al.   INTEGRATION-THE VLSI JOURNAL

Design and Evaluation of an Efficient Schmitt Trigger-Based Hardened Latch in CNTFET Technology

(2017) Majid Moghaddam et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Performance analysis and enhancement of 10-nm GAA CNTFET-based circuits in the presence of CNT-metal contact resistance

(2017) Mohammad Hossein Moaiyeri et al.   Journal of Computational Electronics

Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology

(2016) Younghwi Yang et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques

(2015) Majid Moghaddam et al.   CIRCUITS SYSTEMS AND SIGNAL PROCESSING

Eight-FinFET Fully Differential SRAM Cell With Enhanced Read and Write Voltage Margins

(2015) Shairfe Muhammad Salahuddin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing

(2012) Ming-Hsien Tu et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

5T SRAM With Asymmetric Sizing for Improved Read Stability

(2011) Satyanand Nalam et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

A 250 mV 8 kb 40 nm Ultra-Low Power 9T Supply Feedback SRAM (SF-SRAM)

(2011) Adam Teman et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist

(2010) Ming-Hsien Tu et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

A 32 kb 10T Sub-Threshold SRAM Array With Bit-Interleaving and Differential Read Scheme in 90 nm CMOS

(2009) Ik Joon Chang et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

(2008) Leland Chang et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS