Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor

Modulation of junction modes in SnSe2/MoTe2 broken-gap van der Waals heterostructure

(2020) Juchan Lee et al.   NANO LETTERS

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

(2020) Seungho Kim et al.   Nature Nanotechnology

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe 2

(2020) Changsik Kim et al.   Advanced Electronic Materials

Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors

(2020) Seungho Kim et al.   NANO LETTERS

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

(2020) Nicolò Oliva et al.   npj 2D Materials and Applications

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

(2020) Jingli Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

(2019) Anyuan Gao et al.   Nature Nanotechnology

Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation

(2019) Ngoc Thanh Duong et al.   ACS Nano

A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

(2019) Zheng Yang et al.   ADVANCED MATERIALS

Disorder in van der Waals heterostructures of 2D materials

(2019) Daniel Rhodes et al.   NATURE MATERIALS

Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures

(2019) Anyuan Gao et al.   ACS Nano

Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design

(2019) A Shaker et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Raman spectroscopy of graphene-based materials and its applications in related devices

(2018) Jiang-Bin Wu et al.   CHEMICAL SOCIETY REVIEWS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

(2018) Chenguang Qiu et al.   SCIENCE

Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

(2018) Quoc An Vu et al.   2D Materials

Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure

(2018) Ngoc Thanh Duong et al.   Nanoscale

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

(2018) Gwang Hyuk Shin et al.   ACS Applied Materials & Interfaces

Cleaning interfaces in layered materials heterostructures

(2018) D. G. Purdie et al.   Nature Communications

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack

(2017) Amirhasan Nourbakhsh et al.   Nanoscale

Raman signature and phonon dispersion of atomically thin boron nitride

(2017) Qiran Cai et al.   Nanoscale

Multifunctional high-performance van der Waals heterostructures

(2017) Mingqiang Huang et al.   Nature Nanotechnology

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor

(2017) Xiao Yan et al.   Small

Work function characterization of directionally solidified LaB 6 –VB 2 eutectic

(2017) Tyson C. Back et al.   ULTRAMICROSCOPY

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

The hot pick-up technique for batch assembly of van der Waals heterostructures

(2016) Filippo Pizzocchero et al.   Nature Communications

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

(2015) Gwan-Hyoung Lee et al.   ACS Nano

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

Atomically thin p–n junctions with van der Waals heterointerfaces

(2014) Chul-Ho Lee et al.   Nature Nanotechnology

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS