Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
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Title
Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Authors
Keywords
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Journal
ADVANCED FUNCTIONAL MATERIALS
Volume -, Issue -, Pages 2003859
Publisher
Wiley
Online
2020-09-27
DOI
10.1002/adfm.202003859
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- (2019) Chun-Hao Chu et al. ACS Nano
- Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface
- (2019) Sidi Fan et al. ACS Nano
- Chemically Tuned p‐ and n‐Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics
- (2019) Hyun Goo Ji et al. ADVANCED MATERIALS
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- (2018) Bei Jiang et al. ADVANCED FUNCTIONAL MATERIALS
- Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides
- (2018) Shanshan Wang et al. CHEMICAL SOCIETY REVIEWS
- Contact engineering for 2D materials and devices
- (2018) Daniel S. Schulman et al. CHEMICAL SOCIETY REVIEWS
- Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
- (2018) Mengwei Si et al. NANO LETTERS
- Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
- (2018) Yuan Liu et al. NATURE
- Complementary Logic with Voltage Zero-Loss and Nano-Watt Power via Configurable MoS2 /WSe2 Gate
- (2018) Heng Zhang et al. ADVANCED FUNCTIONAL MATERIALS
- Self-Driven Metal-Semiconductor-Metal WSe2 Photodetector with Asymmetric Contact Geometries
- (2018) Changjian Zhou et al. ADVANCED FUNCTIONAL MATERIALS
- Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
- (2017) Felicia A. McGuire et al. NANO LETTERS
- Steep-slope hysteresis-free negative capacitance MoS2 transistors
- (2017) Mengwei Si et al. Nature Nanotechnology
- Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
- (2016) Mahmut Tosun et al. ACS Nano
- Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping
- (2016) Changjian Zhou et al. ADVANCED FUNCTIONAL MATERIALS
- High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
- (2016) Jingli Wang et al. ADVANCED MATERIALS
- 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
- (2016) Tania Roy et al. APPLIED PHYSICS LETTERS
- Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation
- (2016) Zhangting Wu et al. Nano Research
- High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
- (2015) Lili Yu et al. NANO LETTERS
- Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT
- (2015) Changjian Zhou et al. Nanoscale
- Electrical contacts to two-dimensional semiconductors
- (2015) Adrien Allain et al. NATURE MATERIALS
- WSe2 field effect transistors with enhanced ambipolar characteristics
- (2013) Saptarshi Das et al. APPLIED PHYSICS LETTERS
- Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors
- (2012) Yanjie Zhao et al. NANO LETTERS
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
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