Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

Published 2015 View Full Article

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Title
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
Authors
Keywords
-
Journal
ACS Nano
Volume 9, Issue 7, Pages 7019-7026
Publisher
American Chemical Society (ACS)
Online
2015-06-18
DOI
10.1021/acsnano.5b01341

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