High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

Published 2015 View Full Article

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Title
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
Authors
Keywords
-
Journal
ACS Nano
Volume 9, Issue 10, Pages 10402-10410
Publisher
American Chemical Society (ACS)
Online
2015-09-06
DOI
10.1021/acsnano.5b04611

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