Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor
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Title
Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor
Authors
Keywords
Bilayer memristor, Self-rectifying, Multilevel memory, Crossbar array, Nonvolatile memory
Journal
MATERIALS & DESIGN
Volume 207, Issue -, Pages 109845
Publisher
Elsevier BV
Online
2021-05-23
DOI
10.1016/j.matdes.2021.109845
References
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