A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_x$ Bilayer Structure

Published 2018 View Full Article

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Title
A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_x$ Bilayer Structure
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 2, Pages 924-928
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-12-11
DOI
10.1109/ted.2018.2883192

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