Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory
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Title
Layered (C
6
H
5
CH
2
NH
3
)
2
CuBr
4
Perovskite for Multilevel Storage Resistive Switching Memory
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume -, Issue -, Pages 2002653
Publisher
Wiley
Online
2020-05-14
DOI
10.1002/adfm.202002653
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