Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

(2019) Md. Mamunur Rahman et al.   Micromachines

Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications

(2019) Ying-Chen Chen et al.   AIP Advances

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

(2019) Ying-Chen Chen et al.   Scientific Reports

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

(2018) Qing Luo et al.   IEEE ELECTRON DEVICE LETTERS

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

(2018) S.V. Tikhov et al.   MICROELECTRONIC ENGINEERING

Design of two-terminal-electrode vertical thyristor as cross-point memory cell without selector

(2018) Seung-Hyun Song et al.   APPLIED PHYSICS LETTERS

Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

(2018) Min-Hwi Kim et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

(2018) Sungjun Kim et al.   Nanoscale Research Letters

Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM

(2017) P. Kumbhare et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics

(2017) Maria Trapatseli et al.   JOURNAL OF APPLIED PHYSICS

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

(2017) Chih-Yang Lin et al.   Nanoscale

Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory

(2017) Min-Hwi Kim et al.   SOLID-STATE ELECTRONICS

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

(2017) Sungjun Kim et al.   RSC Advances

An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

(2016) Simone Cortese et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

(2016) Jiantao Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

(2016) Sungjun Kim et al.   Nanoscale Research Letters

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

(2016) Sungjun Kim et al.   Nanoscale Research Letters

Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays

(2016) Rakesh Aluguri et al.   IEEE Journal of the Electron Devices Society

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

(2015) Jung Ho Yoon et al.   ADVANCED MATERIALS

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices

(2015) Jeong Yong Kwon et al.   APPLIED PHYSICS LETTERS

Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

(2015) Chun-Tse Chou et al.   MICROELECTRONICS RELIABILITY

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

(2012) E. Miranda et al.   APPLIED PHYSICS LETTERS

Resistive switching phenomena in thin films: Materials, devices, and applications

(2012) D.B. Strukov et al.   MRS BULLETIN

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

(2012) Sangsu Park et al.   Physica Status Solidi-Rapid Research Letters

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer

(2008) Hisashi Shima et al.   APPLIED PHYSICS LETTERS