Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics

The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

(2016) Xiaoliang Zhong et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

(2015) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Retention failure analysis of metal-oxide based resistive memory

(2014) Shinhyun Choi et al.   APPLIED PHYSICS LETTERS

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

(2014) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

(2012) S. Clima et al.   APPLIED PHYSICS LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films

(2011) Sufi Zafar et al.   APPLIED PHYSICS LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS