AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

Published 2011 View Full Article

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Title
AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 8, Pages 081110
Publisher
AIP Publishing
Online
2011-02-25
DOI
10.1063/1.3559842
References
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