Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

(2010) James R. Grandusky et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

(2010) Tim Kolbe et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

(2009) Hirotoshi Tsuzuki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

(2008) A. Knauer et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics