Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

(2010) James R. Grandusky et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Band gap tuning in GaN through equibiaxial in-plane strains

(2010) L. Dong et al.   APPLIED PHYSICS LETTERS

Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

(2010) Tim Kolbe et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

(2010) M.A. Würtele et al.   WATER RESEARCH

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

(2009) Hirotoshi Tsuzuki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)

(2009) R. G. Banal et al.   PHYSICAL REVIEW B

Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

(2008) A. Knauer et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics