KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

(2014) Wei Guo et al.   JOURNAL OF APPLIED PHYSICS

Polarity control and growth of lateral polarity structures in AlN

(2013) Ronny Kirste et al.   APPLIED PHYSICS LETTERS

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

(2013) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

(2013) Benjamin E. Gaddy et al.   APPLIED PHYSICS LETTERS

Comparative study of etching high crystalline quality AlN and GaN

(2013) W. Guo et al.   JOURNAL OF CRYSTAL GROWTH

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

(2011) R. Dalmau et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

(2011) Cyril Pernot et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

(2010) A. Rice et al.   JOURNAL OF APPLIED PHYSICS

GaN Substrates—Progress, Status, and Prospects

(2009) T. Paskova et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Seeded growth of AlN bulk crystals in m- and c-orientation

(2009) P. Lu et al.   JOURNAL OF CRYSTAL GROWTH