Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

Published 2011 View Full Article

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Title
Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 83, Issue 24, Pages -
Publisher
American Physical Society (APS)
Online
2011-06-28
DOI
10.1103/physrevb.83.245207
References
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