Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT

(2020) Xintong Lyu et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT

(2019) D. K. Panda et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

(2019) Niraj Man Shrestha et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

(2018) Jiejie Zhu et al.   IEEE ELECTRON DEVICE LETTERS

Energy control of neutral oxygen particles passing through an aperture electrode

(2018) Takeo Ohno et al.   Results in Physics

Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs

(2018) Yan Dong et al.   INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS

Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse

(2017) Fuyumi Hemmi et al.   SOLID-STATE ELECTRONICS

A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer

(2015) Niraj Man Shrestha et al.   VACUUM

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

(2015) Chao Yang et al.   Advances in Condensed Matter Physics

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

(2015) Niraj Man Shrestha et al.   Journal of Computational Electronics

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

(2015) Syed Mukulika Dinara et al.   AIP Advances

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

(2014) B. Bakeroot et al.   JOURNAL OF APPLIED PHYSICS

Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

(2013) Nitin Goyal et al.   JOURNAL OF APPLIED PHYSICS

Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

(2012) Nitin Goyal et al.   APPLIED PHYSICS LETTERS

DEPENDENCE OF CAPACITANCE–VOLTAGE CHARACTERISTICS OF NOMINALLY UNDOPED AlGaN/GaN HETEROSTRUCTURES ON SEVERAL KEY PARAMETERS OF THE MATERIALS

(2011) GUIYING TAN et al.   MODERN PHYSICS LETTERS B

Distribution of donor states on etched surface of AlGaN/GaN heterostructures

(2010) Masataka Higashiwaki et al.   JOURNAL OF APPLIED PHYSICS

Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method

(2010) K. Köhler et al.   JOURNAL OF APPLIED PHYSICS

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures

(2010) M. S. Miao et al.   JOURNAL OF APPLIED PHYSICS

Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

(2010) Luke Gordon et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS