On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

(2014) Giorgia Longobardi et al.   IEEE ELECTRON DEVICE LETTERS

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

(2013) R. D. Long et al.   APPLIED PHYSICS LETTERS

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

(2013) M. Matys et al.   APPLIED PHYSICS LETTERS

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2013) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

(2013) Marleen Van Hove et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

(2013) Huolin Huang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2013) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

(2013) X. Liu et al.   JOURNAL OF APPLIED PHYSICS

Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions

(2013) J. Osvald   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

(2012) Marleen Van Hove et al.   IEEE ELECTRON DEVICE LETTERS

Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material

(2012) Ramya Yeluri et al.   JOURNAL OF APPLIED PHYSICS

Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

(2012) Xiang Liu et al.   JOURNAL OF ELECTRONIC MATERIALS

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

(2010) D. Gregušová et al.   JOURNAL OF APPLIED PHYSICS

Distribution of donor states on etched surface of AlGaN/GaN heterostructures

(2010) Masataka Higashiwaki et al.   JOURNAL OF APPLIED PHYSICS

Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

(2010) Luke Gordon et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

(2009) B. L. Swenson et al.   JOURNAL OF APPLIED PHYSICS

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

(2008) Marcin Miczek et al.   JOURNAL OF APPLIED PHYSICS