Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

(2014) Sanjay Kumar Jana et al.   JOURNAL OF APPLIED PHYSICS

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

(2014) Saptarsi Ghosh et al.   SOLID-STATE ELECTRONICS

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

(2013) X. Sun et al.   APPLIED PHYSICS LETTERS

GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial $\hbox{La}_{1.8}\hbox{Y}_{0.2}\hbox{O}_{3}$ as Dielectric

(2013) L. Dong et al.   IEEE ELECTRON DEVICE LETTERS

PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

(2013) Iman Rezanezhad Gatabi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2013) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

(2013) Malek Gassoumi et al.   SEMICONDUCTORS

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

(2012) S. Tripathy et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS