A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer

Published 2015 View Full Article

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Title
A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer
Authors
Keywords
Vertical HEMT, Current blocking layer, Parallel multiple apertures, Vertical leakage, Breakdown voltage, AlGaN/GaN, Silicon oxide, Device simulation
Journal
VACUUM
Volume 118, Issue -, Pages 59-63
Publisher
Elsevier BV
Online
2014-11-26
DOI
10.1016/j.vacuum.2014.11.022

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