Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT

Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands

(2018) Deepak Kumar Panda et al.   IET Circuits Devices & Systems

Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters

(2018) D.K. Panda et al.   INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

(2017) Kai Zhang et al.   IEEE ELECTRON DEVICE LETTERS

3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET

(2017) Pritha Banerjee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

(2017) D.K. Panda et al.   SUPERLATTICES AND MICROSTRUCTURES

Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission

(2016) Raghunandan Swain et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparisons between Dual and Tri Material Gate on a 32 nm Double Gate MOSFET

(2016) Arpan Dasgupta et al.   NANO

High-performance N-polar GaN enhancement-mode device technology

(2013) Uttam Singisetti et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base

(2011) Sansaptak Dasgupta et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$$R_{\rm on}$

(2011) Uttam Singisetti et al.   IEEE ELECTRON DEVICE LETTERS