Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs

Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods

(2017) Szu-Hao Chen et al.   JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY

Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications

(2016) Jae Hwa Seo et al.   IEEE ELECTRON DEVICE LETTERS

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

(2016) Kanjalochan Jena et al.   IET Circuits Devices & Systems

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

(2015) Xing-Ye Zhou et al.   Chinese Physics B

Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors

(2015) I. Saidi et al.   SUPERLATTICES AND MICROSTRUCTURES

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

(2014) Masanobu Hiroki et al.   APPLIED PHYSICS LETTERS

Normally-off vertical-type mesa-gate GaN MOSFET

(2014) Chul-Ho Won et al.   ELECTRONICS LETTERS

Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

(2011) JunShuai Xue et al.   APPLIED PHYSICS LETTERS

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

(2011) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS

High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface

(2010) Akira Nakajima et al.   Applied Physics Express

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

(2009) C. Ostermaier et al.   IEEE ELECTRON DEVICE LETTERS

Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

(2009) Stephan Maroldt et al.   JAPANESE JOURNAL OF APPLIED PHYSICS