Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

(2011) Dandan Jiang et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films

(2010) Xu Gao et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

(2010) Min-Chen Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film

(2010) Po-Chun Yang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

(2010) Yu-Ting Tsai et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS