Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors

Published 2019 View Full Article

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Title
Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors
Authors
Keywords
AlN, x, -based RRAM, RTA process, Nonlinear behaviors, Trapping centroid, Direct tunneling, Trap-assisted tunneling
Journal
MICROELECTRONIC ENGINEERING
Volume 216, Issue -, Pages 111033
Publisher
Elsevier BV
Online
2019-06-06
DOI
10.1016/j.mee.2019.111033

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