Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics

Improved resistive switching characteristics of a Pt/HfO 2 /Pt resistor by controlling anode interface with forming and switching polarity

(2018) Yong Chan Jung et al.   APPLIED SURFACE SCIENCE

Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing

(2018) Yawar Abbas et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Interface engineering of ALD HfO 2 -based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

(2018) Boncheol Ku et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

(2018) Yawar Abbas et al.   Scientific Reports

Effects of moisture and redox reactions in VCM and ECM resistive switching memories

(2018) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

(2018) Xiaodi Wei et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol–gel method with forming-free operation

(2017) Wen-Yi Jian et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhanced resistive switching characteristics in Al2O3memory devices by embedded Ag nanoparticles

(2017) Leiwen Gao et al.   NANOTECHNOLOGY

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film

(2017) Sandeep Munjal et al.   Scientific Reports

Resistive Switching Properties and Failure Behaviors of (Pt, Cu)/Amorphous ZrO2/Pt Sandwich Structures

(2016) Haifa Zhai et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

(2016) Cong Ye et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Resistive Switching Characteristics of Tantalum Oxide with Different Top Electrodes

(2016) Yawar Abbas et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

(2016) Mi Ra Park et al.   MICROELECTRONIC ENGINEERING

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits

(2015) Markus Kubicek et al.   ACS Nano

Amorphous to Tetragonal Zirconia Nanostructures and Evolution of Valence and Core Regions

(2015) Sesha Vempati et al.   Journal of Physical Chemistry C

Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

(2015) Tsung-Ling Tsai et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory

(2015) Lei Zhang et al.   MATERIALS LETTERS

Memory leads the way to better computing

(2015) H.-S. Philip Wong et al.   Nature Nanotechnology

Spectromicroscopic insights for rational design of redox-based memristive devices

(2015) Christoph Baeumer et al.   Nature Communications

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review

(2014) D. Acharyya et al.   MICROELECTRONICS RELIABILITY

Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

(2014) Shinbuhm Lee et al.   APL Materials

Role of oxygen vacancies in TiO2-based resistive switches

(2013) Tingkun Gu   JOURNAL OF APPLIED PHYSICS

Study of atomic layer deposited ZrO2and ZrO2/TiO2films for resistive switching application

(2013) Irina Kärkkänen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2gate insulator

(2013) Byeong-Geun Son et al.   Physica Status Solidi-Rapid Research Letters

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Redox-Based Resistive Switching Memories

(2012) Rainer Waser   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Bottom-up engineering of the surface roughness of nanostructured cubic zirconia to control cell adhesion

(2012) A V Singh et al.   NANOTECHNOLOGY

Structurally ordered intermetallic platinum–cobalt core–shell nanoparticles with enhanced activity and stability as oxygen reduction electrocatalysts

(2012) Deli Wang et al.   NATURE MATERIALS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Subgap optical conductivity in semihydrogenated graphene

(2011) Yee Sin Ang et al.   APPLIED PHYSICS LETTERS

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Fine tuning of the sizes and phases of ZrO2 nanocrystals

(2009) Xiangxing Xu et al.   Nano Research

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS