Multilevel operation of GdOx-based resistive switching memory device fabricated by post-deposition annealing

Resistive switching materials for information processing

(2020) Zhongrui Wang et al.   Nature Reviews Materials

Biomemristors as the next generation bioelectronics

(2020) Bai Sun et al.   Nano Energy

Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

(2019) Seung Ik Oh et al.   Micromachines

Towards spike-based machine intelligence with neuromorphic computing

(2019) Kaushik Roy et al.   NATURE

Electronic structure, charge transfer, and intrinsic luminescence of gadolinium oxide nanoparticles: Experiment and theory

(2018) D.A. Zatsepin et al.   APPLIED SURFACE SCIENCE

Neuromorphic computing with multi-memristive synapses

(2018) Irem Boybat et al.   Nature Communications

Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x

(2017) Michael Lübben et al.   Advanced Electronic Materials

Surface chemistry of rare-earth oxide surfaces at ambient conditions: reactions with water and hydrocarbons

(2017) Elçin Külah et al.   Scientific Reports

Memristors for Energy-Efficient New Computing Paradigms

(2016) Doo Seok Jeong et al.   Advanced Electronic Materials

Low-current operation of novel Gd2 O3 -based RRAM cells with large memory window

(2015) Chao Yang Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Micron thick Gd 2 O 3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

(2015) Daniel A. Grave et al.   THIN SOLID FILMS

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition

(2014) Il-Kwon Oh et al.   CHEMISTRY OF MATERIALS

High-Performance Multilevel Resistive Switching Gadolinium Oxide Memristors With Hydrogen Plasma Immersion Ion Implantation Treatment

(2014) Jer-Chyi Wang et al.   IEEE ELECTRON DEVICE LETTERS

Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices

(2013) Xiang Yang et al.   ACS Nano

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

(2013) Ville Miikkulainen et al.   JOURNAL OF APPLIED PHYSICS

Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation

(2013) Jer-Chyi Wang et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties

(2012) Ke Xu et al.   CHEMISTRY OF MATERIALS

Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications

(2012) C Wiemer et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

(2012) Yi Zhao   Materials

A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory

(2011) Albert B. K. Chen et al.   ADVANCED FUNCTIONAL MATERIALS

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

(2011) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

(2009) Xun Cao et al.   JOURNAL OF APPLIED PHYSICS