Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse

(2018) Selina La Barbera et al.   Advanced Electronic Materials

Multilevel data storage in multilayer phase change material

(2016) Yegang Lu et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol

(2016) Taehong Gwon et al.   CHEMISTRY OF MATERIALS

Memristors for Energy-Efficient New Computing Paradigms

(2016) Doo Seok Jeong et al.   Advanced Electronic Materials

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

(2015) Geoffrey W. Burr et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crystallization in supercooled liquid Cu: Homogeneous nucleation and growth

(2015) J. C. E et al.   JOURNAL OF CHEMICAL PHYSICS

Ultrafast phase change and long durability of BN-incorporated GeSbTe

(2015) Moon Hyung Jang et al.   Journal of Materials Chemistry C

Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals

(2013) Jaeho Lee et al.   APPLIED PHYSICS LETTERS

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

(2013) Seul Ji Song et al.   Scientific Reports

Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

(2012) Taeyong Eom et al.   CHEMISTRY OF MATERIALS

Phase change materials

(2012) Simone Raoux et al.   MRS BULLETIN

The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films

(2011) Moon Hyung Jang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

(2011) Duygu Kuzum et al.   NANO LETTERS

Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

(2010) Byung Joon Choi et al.   APPLIED PHYSICS LETTERS

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Switching Power Reduction in Phase Change Memory Cell Using CVD Ge[sub 2]Sb[sub 2]Te[sub 5] and Ultrathin TiO[sub 2] Films

(2008) Byung Joon Choi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY