Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

Title
Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices
Authors
Keywords
-
Journal
Materials
Volume 5, Issue 8, Pages 1413-1438
Publisher
MDPI AG
Online
2012-08-17
DOI
10.3390/ma5081413

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