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Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

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(2015) Anja Wedig et al.   Nature Nanotechnology

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Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

(2013) Ilia Valov   ChemElectroChem

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Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

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