Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors
Authors
Keywords
thin film transistors, oxygen plasma treatment, density-of-states, a-IGZO
Journal
Electronic Materials Letters
Volume 13, Issue 1, Pages 45-50
Publisher
Springer Nature
Online
2016-11-28
DOI
10.1007/s13391-017-6214-6
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Performance enhancement in InZnO thin-film transistors with compounded ZrO 2 –Al 2 O 3 nanolaminate as gate insulators
- (2016) Jianhua Zhang et al. CERAMICS INTERNATIONAL
- Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties
- (2016) Abdoul Karim Sekone et al. Nanoscale Research Letters
- Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties
- (2016) Abdoul Karim Sekone et al. Nanoscale Research Letters
- Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display
- (2015) Teresa Oh Electronic Materials Letters
- Electrical Properties and Reliability Analysis of Solution-Processed Indium Tin Zinc Oxide Thin Film Transistors with O2-Plasma Treatment
- (2015) Sun Wook Ko et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures
- (2015) Xingwei Ding et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Origin of electrical improvement of amorphous TaInZnO TFT by oxygen thermo-pressure-induced process
- (2014) Byung Du Ahn et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator
- (2014) Xingwei Ding et al. SUPERLATTICES AND MICROSTRUCTURES
- Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping
- (2013) Jayapal Raja et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Effect of O 2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films
- (2013) P. Liu et al. THIN SOLID FILMS
- Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors
- (2012) Hendrik Faber et al. ACS Applied Materials & Interfaces
- High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment
- (2012) Pradipta K. Nayak et al. APPLIED PHYSICS LETTERS
- Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
- (2012) Geng-Wei Chang et al. IEEE ELECTRON DEVICE LETTERS
- The Deterioration of a-IGZO TFTs Owing to the Copper Diffusion after the Process of the Source/Drain Metal Formation
- (2012) Ya-Hsiang Tai et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- N 2 O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors
- (2012) Geng-Wei Chang et al. SURFACE & COATINGS TECHNOLOGY
- Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor
- (2011) Do Hyung Kim et al. APPLIED PHYSICS LETTERS
- Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor
- (2011) Sang Yeol Lee et al. APPLIED PHYSICS LETTERS
- Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
- (2011) C.J. Chiu et al. VACUUM
- High-Temperature Stability and Enhanced Performance of a-Si:H TFT on Flexible Substrate Due to Improved Interface Quality
- (2010) Anil Indluru et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors
- (2010) Kwang Hwan Ji et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
- (2009) Sunho Jeong et al. ADVANCED MATERIALS
- Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
- (2009) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors
- (2009) Kazushige Takechi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More