The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Meyer–Neldel Rule and Extraction of Density of States in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending

(2010) Jaewook Jeong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

(2009) Ayumu Sato et al.   APPLIED PHYSICS LETTERS

Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies

(2009) Charlene Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

(2009) Jae Kyeong Jeong et al.   Journal of the Society for Information Display

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

(2008) Jong Han Jeong et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS