Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Published 2013 View Full Article

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Title
Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 11, Pages 115010
Publisher
IOP Publishing
Online
2013-10-18
DOI
10.1088/0268-1242/28/11/115010

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