Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 34, Issue 3, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4944054
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Funding
- Advanced Research Projects Agency-Energy for the SWITCHES Program
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The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 mu m are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 mu m deep, 0.831 nm rms roughness etch, with a 7.6 degrees angle from vertical and low surface damage as measured by photoluminescence. (C) 2016 American Vacuum Society.
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