Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

In this letter, a method of using selective area growth (SAG) technique was proposed to fabricate the enhancement-mode (E-mode) AlGaN/-GaN heterostructure field effect transistors (HFETs), which can effectively avoid the plasma treatment damage to the active region of HFETs in comparison with the conventional methods. The SAG-HFETs exhibited a good performance of the maximum drain current of 300 mA/-mm and peak transconductance of 135 mS/-mm with a larger positive threshold voltage of 0.4 V. The results indicate that the SAG technique is a promising method to realize the high performance E-mode GaN based HFETs. (C) 2011 American Institute of Physics. [doi:10.1063/-1.3553229]