A > 3 kV/2.94 mΩ.cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn-on voltage (V-on), high breakdown voltage (BV) with low reverse leakage current (I-R), and high power figure of merit (P-FOM) through anode engineering technique. Lateral GaN SBD with anode-cathode distance (L-AC) of 25 mu m demonstrates a V-on = 0.38 V, a BV of >3 kV at a IR of 10 mu A/mm and differential specific ON-resistance (R-on,R-sp) of 2.94 m Tau.cm(2), yielding a high P-FOM of more than 3 GW/cm(2). To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current (IF) and reverse BV > 2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.