Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
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Title
Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
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Keywords
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Journal
Science China-Materials
Volume -, Issue -, Pages -
Publisher
Springer Science and Business Media LLC
Online
2020-09-30
DOI
10.1007/s40843-020-1444-1
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