Review
Nanoscience & Nanotechnology
Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park
Summary: HfO2 is a promising material for emerging ferroelectric and resistive switching memory devices due to its excellent electrical properties and compatibility with existing fabrication processes. The presence of oxygen vacancies (Vo) in HfO2 films greatly affects the material properties, device performance, and reliability. Understanding the formation mechanism and effects of Vo is crucial for improving the performance and reliability of HfO2-based devices.
Article
Multidisciplinary Sciences
Jaeun Eom, In Hak Lee, Jung Yun Kee, Minhyun Cho, Jeongdae Seo, Hoyoung Suh, Hyung-Jin Choi, Yumin Sim, Shuzhang Chen, Hye Jung Chang, Seung-Hyub Baek, Cedomir Petrovic, Hyejin Ryu, Chaun Jang, Young Duck Kim, Chan-Ho Yang, Maeng-Je Seong, Jin Hong Lee, Se Young Park, Jun Woo Choi
Summary: We investigate the voltage control of magnetism in a van der Waals heterostructure device consisting of the ferromagnetic Fe3-xGeTe2 and ferroelectric In2Se3. We found that gate voltages can effectively modulate the magnetic properties of Fe3-xGeTe2, reducing its coercive field regardless of the voltage polarity. Raman spectroscopy shows that the lattice constants of In2Se3 and Fe3-xGeTe2 increase with voltage for both polarities. This can be attributed to the presence of in-plane tensile strain, which is supported by density functional theory calculations. Our results demonstrate a low-power voltage-controlled van der Waals spintronic device utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Physical
Pankaj Solanki, Mayur Vala, Dhananjay Dhruv, Sandip V. Bhatt, Bharat Kataria
Summary: This study describes the synthesis and electrical transport properties of GdMnO3/Al-doped ZnO and GdMnO3/ZnO heterostructures grown by vacuum deposition. The structures of the samples are confirmed by XRD and the surface topography is analyzed using AFM. The electrical properties and resistive switching behavior are investigated through Hall measurements and current-voltage characteristics. Raman spectroscopy is used to study the vibrational modes of the MnO6 octahedra. The results provide insight into the conduction mechanisms and resistive switching behavior of these heterostructures.
SURFACES AND INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Kai Huang, Ding-Fu Shao, Evgeny Y. Tsymbal
Summary: In this study, we demonstrate the electrical control of DMI and magnetic skyrmions in a Fe3GeTe2 monolayer through the ferroelectric polarization of an adjacent 2D vdW ferroelectric In2Se3. The results show that the magnitude and sign of DMI can be controlled by ferroelectric polarization reversal, leading to the creation and annihilation of skyrmions.
Article
Chemistry, Multidisciplinary
Guogang Liu, Tong Chen, Guanghui Zhou, Zhonghui Xu, Xianbo Xiao
Summary: In this work, multiferroic van der Waals heterostructures consisting of FeI2 and In2S3 monolayers were explored for their electronic structures and transport properties. It was found that the FeI2 monolayer can be switched between semiconducting and half-metallic properties by controlling the ferroelectric polarization states of In2S3. Furthermore, it was demonstrated that the FeI2/In2S3 heterostructure exhibits high selectivity and sensitivity as a gas sensor, with reversible capture behavior for NH3.
Article
Materials Science, Multidisciplinary
Alexandre Silva, Ignasi Fina, Florencio Sanchez, Jose P. B. Silva, Luis Marques, Veniero Lenzi
Summary: We investigated the influence of La content on the structural and ferroelectric properties of epitaxial HfO2 films. It was found that 2-5 at. % La-doped HfO2 films exhibit optimum remanent polarization and reduced coercive field. Density functional theory calculations supported the experimental results and revealed that the polarization switching in epitaxial La:HfO2 films can be understood based on the synergetic contribution of a non-ferroelectric monoclinic phase and La doping itself.
MATERIALS TODAY PHYSICS
(2023)
Article
Physics, Applied
Xiangping Zhang, Xingan Jiang, Jianming Deng, Xueyun Wang, Jiawang Hong
Summary: This study demonstrates the sunlight-assisted ferroelectric domain switching in Sn2P2S6 single crystals by employing simulated sunlight illumination. The localized carrier concentration of Sn ions is enhanced, inducing an additional internal field and assisting domain switching. The migration and accumulation of Sn ions are also verified, which can be utilized as a resistive memory prototype.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Inorganic & Nuclear
Le-Ping Miao, Ning Ding, Na Wang, Heng-Yun Ye, Chao Shi, Shuai Dong
Summary: This research reports a microporous structural molecular rotor ferroelectric material with fast switching spontaneous polarization (P-s), high operational performance, and stability, which shows potential application in the next-generation non-volatile memory devices.
INORGANIC CHEMISTRY FRONTIERS
(2022)
Article
Nanoscience & Nanotechnology
Celine Lichtensteiger, Marios Hadjimichael, Edoardo Zatterin, Chia-Ping Su, Iaroslav Gaponenko, Ludovica Tovaglieri, Patrycja Paruch, Alexandre Gloter, Jean-Marc Triscone
Summary: We investigate the ferroelastic/ferroelectric domain structure in PbTiO3 epitaxially strained on (110)(o)-oriented DyScO3 substrates. The anisotropic strain created by the orthorhombic substrate results in an asymmetry in the domain configuration, with domain walls aligned along one of the two in-plane directions. The periodicity of the film thickness deviates from the Kittel law, and the domain configuration transitions from flux-closure to a/c-phase as the thickness increases, forming larger superdomains.
Article
Chemistry, Physical
Hengxing Bao, Hao Tian, Changjie Dai, Xu Li, Yandong Guo, Yurong Yang, Di Wu
Summary: This study investigates the electronic and tunneling transport properties of a two-dimensional ferroelectric/ferromagnetic van der Waals heterostructure through first-principles calculations. The heterostructure exhibits two states that can be switched by reversing the polarization in the indium selenide layer, showing different conducting properties in transport calculations.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Chemistry, Physical
Hongyan Qi, Weixin Wu, Xinqi Chen, Hee Chul Lee
Summary: In this study, BiFeO3/La0.7Sr0.3MnO3 heterostructures were successfully synthesized and stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal were observed. The conduction mechanism followed the Schottky emission model, and the memristive behavior was explained by the modulation effect on the depletion region width and Schottky barrier height caused by ferroelectric polarization reversal.
Article
Nanoscience & Nanotechnology
Ning Ding, Kunihiro Yananose, Carlo Rizza, Feng-Ren Fan, Shuai Dong, Alessandro Stroppa
Summary: We studied the magneto-optical Kerr effect (MOKE) in a two-dimensional heterostructure CrI3/In2Se3/CrI3 using density functional theory calculations and symmetry analysis. The mirror and time-reversal symmetries are broken by the spontaneous polarization in the In2Se3 ferroelectric layer and the antiferromagnetic ordering in the CrI3 layers, thereby activating MOKE. Our results demonstrate that the Kerr angle can be reversed by either the polarization or the antiferromagnetic order parameter. This suggests that ferroelectric and antiferromagnetic 2D heterostructures could be utilized for compact information storage devices, with the information encoded by the two ferroelectric or the two time-reversed antiferromagnetic states and read optically via MOKE.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Review
Chemistry, Multidisciplinary
Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du
Summary: This review comprehensively examines the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. It discusses the fabrication techniques for preparing functional BFO layers, analyzes the lattice systems and crystal types responsible for RS behaviors, and reviews the underlying physical mechanisms and effects influencing RS in BFO-based memristive devices. Furthermore, the review explores the applications of BFO devices, evaluates energy consumption in RS, and discusses potential optimization techniques for memristive devices.
Article
Chemistry, Multidisciplinary
Biaohong Huang, Xuefeng Zhao, Xiaoqi Li, Lingli Li, Zhongshuai Xie, Di Wang, Dingshuai Feng, Yuxuan Jiang, Jingyan Liu, Yizhuo Li, Guoliang Yuan, Zheng Han, Tula R. Paudel, Guozhong Xing, Weijin Hu, Zhidong Zhang
Summary: In this study, the authors utilize the Schottky barrier at the metal/ferroelectric interface to control the self-polarization states of a ferroelectric thin film heterostructure. Through investigation and theoretical studies, they demonstrate that doping with Sm changes the concentration and distribution of oxygen vacancies, which alters the Schottky barrier and depolarization field, resulting in the evolution of the system from single domain to polydomain states. By engineering self-polarization, they also achieve significant improvement in the resistive switching behaviors of the ferroelectric diodes (FDs). This research provides insights into self-polarization and its impact on device performance, making FDs a competitive memristor candidate for neuromorphic computing.
Article
Chemistry, Physical
Charanjeet Singh, Vikas N. Thakur, Ashok Kumar
Summary: The study disproved the reservation in the scientific community that resistive switching phenomenon is exclusive to thin films and ultra-thin films, showing that it can also be observed in bulk ferroelectric ceramics controlled by displacement current, exhibiting multi-level resistance states.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Yong Mei Liang, Zhan Jie Wang, Yu Bai, Ying Jie Wu, Xing Kun Ning, Xin Guo Zhao, Wei Liu, Zhi Dong Zhang
JOURNAL OF PHYSICAL CHEMISTRY C
(2019)
Article
Chemistry, Physical
Yingjie Wu, Zhanjie Wang, Yongmei Liang, Zhidong Zhang
JOURNAL OF ALLOYS AND COMPOUNDS
(2020)
Article
Materials Science, Ceramics
Yi Zhuo Li, Zhan Jie Wang, Yu Bai, Zhi Dong Zhang
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2020)
Article
Chemistry, Multidisciplinary
Yi Zhuo Li, Jun Liang Lin, Yu Bai, Yanxi Li, Zhi Dong Zhang, Zhan Jie Wang
Article
Nanoscience & Nanotechnology
Jun Liang Lin, Zhan Jie Wang, Xiang Zhao, Zhi Dong Zhang
SCRIPTA MATERIALIA
(2020)
Article
Nanoscience & Nanotechnology
Ri He, Jun Liang Lin, Qing Liu, Zhaoliang Liao, Lingling Shui, Zhan Jie Wang, Zhicheng Zhong, Run-Wei Li
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Materials Science, Multidisciplinary
Zhan Jie Wang
Summary: This article summarizes the research progress and main factors affecting the LFMR effect in perovskite manganite composite films, and discusses new approaches to enhance the LFMR effect through nanostructure design.
Article
Materials Science, Multidisciplinary
Fan Zhang, Yang Lv, Yan Shao, Yu Bai, Yi Zhuo Li, Chao Wang, Zhan Jie Wang
Summary: The PZT/LNO/PZT composite films were prepared with different thicknesses of LNO layer, and it was found that the electrical properties were significantly enhanced due to the in-plane compressive strain effect and accumulated space charges at the PZT/LNO interface. The composite film with a 140-nm-thick LNO layer showed the best electrical properties in terms of remnant polarization and dielectric constant.
Article
Materials Science, Ceramics
Xu Wang, Yuxuan He, Chao Wang, Yu Bai, Fan Zhang, Yusheng Wu, Guihong Song, Zhan Jie Wang
Summary: Novel high-entropy ceramics were prepared for thermal environmental barrier coatings (TEBCs) and the influence of configuration entropy and lattice distortion on microstructures and thermal properties at high temperature was investigated. The results showed that configuration entropy contributed to the stability of thermal properties and microstructure, while lattice distortion reduced thermal properties due to enhanced atomic nonharmonic vibration.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2022)
Article
Materials Science, Ceramics
Yinuo Duan, Duandan Shangguan, Chao Wang, Yu Bai, Fan Zhang, Yusheng Wu, Guihong Song, Zhan Jie Wang
Summary: In this study, (1-x)PbZrO3-xSrTiO(3) (PZO-STO) antiferroelectric films were prepared and the effects of STO content on the microstructure and energy storage performance were investigated. The results showed that thin films with 20% STO content had the highest energy storage density.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2022)
Article
Materials Science, Ceramics
Tong Shi, Fan Zhang, Wuyou Sun, Jinrui Li, Yu Bai, Chao Wang, Shiying Liu, Xin Wang, Yunhong Yang, Zhan Jie Wang
Summary: In this study, composite ceramics of 0.94Mg((1-3x/2))Ce(x)TiO(3)-0.06(Ca0.8Sr0.2)TiO3 (MCexT-CST, 0 <= x <= 0.01) were prepared at a low temperature of 1175 degrees C. The effects of Ce3+ doping on crystalline phase, microstructure, and microwave dielectric properties of MCexT-CST were investigated. The results showed that Ce3+ substitution effectively inhibited oxygen vacancy formation and improved the Qxf value of the material.
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Jun Liang Lin, Yuanwei Sun, Ri He, Yanxi Li, Zhicheng Zhong, Peng Gao, Xiang Zhao, Zhidong Zhang, Zhan Jie Wang
Summary: Artificial superlattices with SrRuO3 layers of 2 unit cell thickness exhibit a robust room-temperature ferroelectric polarization. Oxygen vacancies accumulated at the SrTiO3/SrRuO3 interfaces cause lattice distortions and increased tetragonality. The observed ferroelectric responses are mainly attributed to the broken spatial inversion symmetry induced by the ordered distribution of oxygen vacancies at the interfaces, coupled with the triggering of external electric field.
Article
Materials Science, Ceramics
Yuxuan He, Xu Wang, Chao Wang, Shiying Liu, Liuyuan Li, Yusheng Wu, Zhanjie Wang
Summary: A novel high-entropy (4RE(0.25))(2)Si2O7/(4RE(0.25))(2)SiO5 (RE = Y, Yb, Er, and Sc) multiphase ceramic was prepared to improve the resistance of rare-earth silicates to molten CMAS at high temperature. The ceramic exhibited a reaction layer thickness of only 55 μm after 48 h of corrosion at 1500 degrees C, indicating its effectiveness in resisting molten CMAS corrosion.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2023)
Article
Materials Science, Ceramics
Xue Zhang, Fan Zhang, Yiwen Niu, Zhiqiang Zhang, Yu Bai, Zhanjie Wang
Summary: A novel lead-free high-entropy ceramic system (BNCBST-xLa) was designed with La substitution to enhance energy storage performance, and prepared through a hydrothermal method. La doping induced lattice distortion and improved dielectric relaxation. In addition, La content inhibited grain growth, resulting in increased insulation resistance and electric breakdown strength. The system with x = 0.03 exhibited excellent recoverable energy density and high energy storage efficiency, along with wide temperature stability. These findings suggest promising applications of La-modified BNBCST HECs in energy storage.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2023)
Article
Chemistry, Multidisciplinary
Yin Fang, Yu Bai, Yi Zhuo Li, Ning Liu, Fan Zhang, Chao Wang, Zhan Jie Wang
Summary: Antiferroelectric PbZrO3 films crystallized by microwave radiation show improved energy storage performance compared to films crystallized by ordinary heating, with higher energy storage density and better stability and electric breakdown strength.
