A New Memristor with 2D Ti 3 C 2 T x MXene Flakes as an Artificial Bio‐Synapse
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Title
A New Memristor with 2D Ti
3
C
2
T
x
MXene Flakes as an Artificial Bio‐Synapse
Authors
Keywords
-
Journal
Small
Volume -, Issue -, Pages 1900107
Publisher
Wiley
Online
2019-05-08
DOI
10.1002/smll.201900107
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Note: Only part of the references are listed.- Metallic Ti3C2Tx MXene Gas Sensors with Ultrahigh Signal-to-Noise Ratio
- (2018) Seon Joon Kim et al. ACS Nano
- Synapse-Like Organic Thin Film Memristors
- (2018) Ya-Nan Zhong et al. ADVANCED FUNCTIONAL MATERIALS
- Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
- (2018) Woong Huh et al. ADVANCED MATERIALS
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- (2018) Xiaobing Yan et al. APPLIED PHYSICS LETTERS
- Improving the electrochemical properties of MXene Ti 3 C 2 multilayer for Li-ion batteries by vacuum calcination
- (2018) Fanyu Kong et al. ELECTROCHIMICA ACTA
- Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates
- (2018) Xiaobing Yan et al. Nano Research
- Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2
- (2018) Hui-Kai He et al. Small
- Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine-Facilitated Synaptic Activity
- (2018) Seonggil Ham et al. ADVANCED FUNCTIONAL MATERIALS
- Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application
- (2017) Xiaobing Yan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells
- (2017) Chuan-Sen Yang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Learning through ferroelectric domain dynamics in solid-state synapses
- (2017) Sören Boyn et al. Nature Communications
- High-Performance, Self-Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction
- (2017) Quanshan Lv et al. Advanced Optical Materials
- Recent progress in layered transition metal carbides and/or nitrides (MXenes) and their composites: synthesis and applications
- (2017) Vincent Ming Hong Ng et al. Journal of Materials Chemistry A
- Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- 2D metal carbides and nitrides (MXenes) for energy storage
- (2017) Babak Anasori et al. Nature Reviews Materials
- Hybrids of Two-Dimensional Ti3C2 and TiO2 Exposing {001} Facets toward Enhanced Photocatalytic Activity
- (2016) Chao Peng et al. ACS Applied Materials & Interfaces
- Highly Conductive Optical Quality Solution-Processed Films of 2D Titanium Carbide
- (2016) Andrew D. Dillon et al. ADVANCED FUNCTIONAL MATERIALS
- Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
- (2016) Chunxue Hao et al. ADVANCED FUNCTIONAL MATERIALS
- Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
- (2016) Zongwei Wang et al. Nanoscale
- Charge trap memory based on few-layer black phosphorus
- (2016) Qi Feng et al. Nanoscale
- Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics
- (2015) Chao Du et al. ADVANCED FUNCTIONAL MATERIALS
- An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions
- (2015) Hongwei Tan et al. ADVANCED MATERIALS
- Memory and Information Processing in Neuromorphic Systems
- (2015) Giacomo Indiveri et al. PROCEEDINGS OF THE IEEE
- Recent advances in MXene: Preparation, properties, and applications
- (2015) Jin-Cheng Lei et al. Frontiers of Physics
- Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
- (2015) Yu-Fen Wang et al. Scientific Reports
- Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films
- (2014) X. B. Yan et al. APPLIED PHYSICS LETTERS
- Transparent Conductive Two-Dimensional Titanium Carbide Epitaxial Thin Films
- (2014) Joseph Halim et al. CHEMISTRY OF MATERIALS
- A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
- (2013) Shimeng Yu et al. ADVANCED MATERIALS
- Cation Intercalation and High Volumetric Capacitance of Two-Dimensional Titanium Carbide
- (2013) M. R. Lukatskaya et al. SCIENCE
- Pattern classification by memristive crossbar circuits using ex situ and in situ training
- (2013) Fabien Alibart et al. Nature Communications
- Are MXenes Promising Anode Materials for Li Ion Batteries? Computational Studies on Electronic Properties and Li Storage Capability of Ti3C2 and Ti3C2X2 (X = F, OH) Monolayer
- (2012) Qing Tang et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Towards artificial neurons and synapses: a materials point of view
- (2012) Doo Seok Jeong et al. RSC Advances
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
- (2011) Zhibo Yan et al. ADVANCED MATERIALS
- Two-Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2
- (2011) Michael Naguib et al. ADVANCED MATERIALS
- Synaptic behaviors and modeling of a metal oxide memristive device
- (2011) Ting Chang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Resistance switching memories are memristors
- (2011) Leon Chua APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory
- (2011) Lijie Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
- (2008) Myoung-Jae Lee et al. ADVANCED FUNCTIONAL MATERIALS
- Spike Timing–Dependent Plasticity: A Hebbian Learning Rule
- (2008) Natalia Caporale et al. Annual Review of Neuroscience
- Transistor analogs of emergent iono‐neuronal dynamics
- (2008) Guy Rachmuth et al. HFSP Journal
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Dendritic Excitability and Synaptic Plasticity
- (2008) P. Jesper Sjöström et al. PHYSIOLOGICAL REVIEWS
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