Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM

Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

(2020) Sreekanth Ginnaram et al.   IEEE ELECTRON DEVICE LETTERS

Improvement in Threshold Switching Performance Using Al₂O₃ Interfacial Layer in Ag/Al₂O₃/SiOₓ/W Cross-Point Platform

(2020) Subhranu Samanta et al.   IEEE ELECTRON DEVICE LETTERS

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

(2019) Donguk Lee et al.   Advanced Electronic Materials

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

(2019) Jiantai Timothy Qiu et al.   LANGMUIR

Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

(2019) Jae-Hyeun Park et al.   ACS Applied Materials & Interfaces

Nanoscale resistive switching memory devices: a review

(2019) Stefan Slesazeck et al.   NANOTECHNOLOGY

Highly Uniform Resistive Switching Performances Using Two-dimensional Electron Gas at Thin Film Heterostructure for Conductive Bridge Random Access Memory

(2019) Sung Min Kim et al.   ACS Applied Materials & Interfaces

Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains

(2019) Xiaofei Cao et al.   ACS Applied Materials & Interfaces

Sensing characteristics of dopamine using Pt/n-Si structure

(2019) Anisha Roy et al.   VACUUM

Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

(2019) Nishant Saxena et al.   Scientific Reports

Limited Stochastic Current for Energy-Optimized Switching of Spin-Transfer-Torque Magnetic Random-Access Memory

(2019) Eunchong Baek et al.   Physical Review Applied

Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al2O3 Interface

(2018) Hyunsuk Woo et al.   ACS Applied Materials & Interfaces

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

High performance bi-layer atomic switching devices

(2017) Jae Hyeok Ju et al.   Nanoscale

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Resistance random access memory

(2016) Ting-Chang Chang et al.   Materials Today

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure

(2015) S. Roy et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

(2015) Debanjan Jana et al.   Nano-Micro Letters

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

(2015) Debanjan Jana et al.   Nano-Micro Letters

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

(2015) Rajeswar Panja et al.   Nanoscale Research Letters

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

(2014) B. Attarimashalkoubeh et al.   ECS Solid State Letters

Two resistive switching regimes in thin film manganite memory devices on silicon

(2013) D. Rubi et al.   APPLIED PHYSICS LETTERS

Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

(2013) A. Sleiman et al.   JOURNAL OF APPLIED PHYSICS

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

(2013) Narendar Gogurla et al.   NANOTECHNOLOGY

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3:H

(2008) F. El Kamel et al.   APPLIED PHYSICS LETTERS